UTC Sensors Unlimited produces LE InGaAs array products with 1024 elements on 25 μm channel spacing and a pixel height of 25 or 500 μm for standard 0.8 to 1.7 μm arrays. Anti-blooming protection prevents charge flow from saturated pixels, allowing for increased intra-scenic dynamic range. These channels are >99% operable and have unmatched uniformity. The photodetector arrays are hybridized with CMOS readout integrated circuits (ROIC) of SUI’s exclusive design to offer maximum noise immunity and sensitivity. Operating circuit designs need only provide for one analog supply and two digital control lines for optimum ROIC performance. Two separate gains are selectable with a single input. Arrays are available with thermoelectric coolers for temperature stabilization and monitoring. SUI LE-Series photodiode arrays are reliable and available in volume. Other applications for the SU1024LE-1.7 include industrial process control and inspection in agricultural sorting, biomedical analysis and thermal imaging.
Benefits:
- Room temperature stabilized
- Reduced fixed pattern noise
- ESD resistant
- Easy to use
- Large collection area for spectroscopy
- Square pixel for machine vision.
Features:
- 25 μm pitch
- Operating wavelength range 0.8 μm–1.7 μm or 1.0 to 2.2 μm
- 100 KHz to 1.25 MHz clock rate
- 2.5 MPix/sec composite readout rate
- Selectable full-well capacity of 5 or 130 million electrons
Electrical Inputs:
Parameter/Description |
Unit |
Min. |
Typical. |
Max. |
VDD/Analog supply voltage |
V |
4.90 |
5.00 |
5.25 |
VSS/Analog supply ground |
V |
|
0 |
|
VCLK/Digital pixel clock |
V |
|
Hi: VDD Low: VSS |
|
VLSYNC/Digital exposure control |
V |
|
Hi: VDD Low: VSS |
|
VCAP/Digital gain control |
V |
|
Hi: VDD Low: VSS |
|
Performance Characteristics:
Parameter |
Unit |
Min. |
Typical |
Max |
Peak wavelength sensitivity (λpk) |
μm |
|
1.5 |
|
Responsivity (at λpk)2 |
nV/photon |
10.5 | ||
Photoresponse nonuniformity (PRNU) |
+/- % |
5 | 10 | |
Quantum efficiency (QE) |
% | 70 | ||
Non-linearity of response |
% |
1 |
||
Gain |
nV/electron |
400 1, 15.4 2
|
||
Saturation charge |
Me | 5 1, 130 2 | ||
Readout noise | Electrons rms | 800 1,10,000 2 | ||
Dark rate 2 | V/s | 0.2 2 3 0.06 2 4 | 0.25 2 3 0.5 2 4 | |
Sensor dynamic range | ratio | 6250:1 I 13000:1 2 | ||
Readout rate per port | MHz | 0.01 | 2.5 | |
Inoperable pixels | % | 1 | ||
1 High-sensitivity mode: high gain capacitor 2 High dynamic range mode: low gain capacitor 3 25 micron pixel height 4 500 micron pixel height |


