Achieving atomic-resolution microscopy of Al-Cu thin films on electron-transparent silicon nitride TEM grids is hindered by the limitations of conventional preparation techniques. Dimpling, grinding, and standard ion milling are incompatible with the grid's fragile and stressed silicon nitride window. Additionally, the focused ion beam (FIB) lift-out technique risks rupturing the stressed windows, which can cause specimen loss. Ga contamination during FIB milling poses a further challenge, potentially causing room-temperature diffusion and liquid metal embrittlement [1] on the Al-Cu thin film. Consequently, concentrated Ar ion beam milling is presented as a viable site-specific method for plan-view atomic-resolution analysis of Al-Cu thin films on silicon nitride grids.

Fiducial markers (SEM image) were created using electron beam-assisted Pt deposition within a FIB system. Subsequent thinning of the sample was performed using low-energy, concentrated Ar ion beam milling using Fischione Instruments’ Model 1040 NanoMill® TEM specimen preparation system. This procedure yielded a TEM specimen with a large field of view, approximately 1000 μm², with minimal damage to the surrounding material. The resulting thin sections, characterized by EFTEM, enabled atomic-resolution imaging of θ’‑Al2Cu precipitates formed via aging by solid-state phase transformation in Al-Cu alloys [2]. This methodology is applicable to specimens on silicon nitride TEM grids following in situ TEM studies, enabling subsequent atomic-resolution imaging.

The scanning electron microscopy (SEM) image (left) shows a rapidly solidified AlCu melt pool and Pt markers for locating the region of interest for Ar ion milling. The area marked by the green square was targeted for site-specific thinning using a ~1 μm diameter Ar ion beam. Before Ar ion beam milling (centre), two-phase and one-phase regions were identified. Using an energy-filtered transmission electron microscopy (EFTEM) thickness map, a variation in specimen thickness, t/λ, ranging from 1.2 to 1.4, was revealed. After Ar ion beam milling (right), the specimen was reduced to t/λ ~ 0.2, which is estimated to be 28 to 32 nm specimen thickness.

[1] Stumpf, R., & Feibelman, P. J. (1996). Towards an understanding of liquid-metal embrittlement: Energetics of Ga on Al surfaces. Physical Review. B, Condensed Matter, 54(7), 5145–5150.
[2] Vishwanadh, B., Jo, J., Bonifacio, C. S., & Wiezorek, J. M. (2022). Site-specific preparation of plan-view samples with a large field of view for atomic resolution STEM and TEM studies of rapidly solidified multi-phase Al Cu thin films. Materials Characterization, 189, 111943.

Learn more

Contact us on 01582 764334 to speak with one of our Product Specialists.

Lambda Photometrics is the leading UK Distributor of Characterisation, Measurement and Analysis solutions with particular expertise in Instrumentation, Laser & Light based products, Optics, Electro-optic Testing, Spectroscopy, Machine Vision, Optical Metrology, Fibre Optics, Microscopy and Anti-vibration tables & custom solutions